? 2000 ixys all rights reserved 1 - 3 i davm = 21 a v rrm = 800-1600 v v rsm v rrm type v dsm v drm vv 900 800 vhf 15-08io5 1300 1200 vhf 15-12io5 1500 1400 vhf 15-14io5 1700 1600 vhf 15-16io5 data according to iec 60747 and refer to a single thyristor/diode unless otherwise stated. for resistive load ixys reserves the right to change limits, test conditions and dimensions. symbol test conditions maximum ratings i dav t k = 85 c, module 15 a i davm module 21 a i frms , i trms per leg 15 a i fsm , i tsm t vj = 45 c; t = 10 ms (50 hz), sine 190 a v r = 0 v t = 8.3 ms (60 hz), sine 210 a t vj = t vjm t = 10 ms (50 hz), sine 170 a v r = 0 v t = 8.3 ms (60 hz), sine 190 a i 2 t t vj = 45 c t = 10 ms (50 hz), sine 160 a 2 s v r = 0 v t = 8.3 ms (60 hz), sine 180 a 2 s t vj = t vjm t = 10 ms (50 hz), sine 140 a 2 s v r = 0 v t = 8.3 ms (60 hz), sine 145 a 2 s (di/dt) cr t vj = 125 c repetitive, i t = 50 a 150 a/ s f =50 hz, t p =200 s v d = 2/3 v drm i g = 0.3 a, non repetitive, i t = 1/2 ? i dav 500 a/ s di g /dt = 0.3 a/ s (dv/dt) cr t vj = t vjm ; v dr = 2/3 v drm 1000 v/ s r gk = ; method 1 (linear voltage rise) v rgm 10 v p gm t vj = t vjm t p = 30 s 10 w i t = i tavm t p = 500 s 5w t p = 10 ms 1w p gavm 0.5 w t vj -40...+125 c t vjm 125 c t stg -40...+125 c v isol 50/60 hz, rms t = 1 min 3000 v~ i isol 1 ma t = 1 s 3600 v~ m d mounting torque (m5) 2-2.5 nm (10-32 unf) 18-22 lb.in. weight 50 g features package with dcb ceramic base plate isolation voltage 3600 v~ planar passivated chips 1/4" fast-on terminals ul registered e 72873 applications supply for dc power equipment dc motor control advantages easy to mount with two screws space and weight savings improved temperature and power cycling dimensions in mm (1 mm = 0.0394") vhf 15 half controlled single phase rectifier bridge with freewheeling diode 1 2 3 6 8 4 2 8 6 4 3 1 .com .com .com 4 .com u datasheet
? 2000 ixys all rights reserved 2 - 3 symbol test conditions characteristic values i r , i d v r = v rrm ; v d = v drm t vj = t vjm 5ma t vj = 25 c 0.3 ma v t , v f i t , i f = 45 a; t vj = 25 c 2.8 v v t0 for power-loss calculations only (t vj = 125 c) 1.0 v r t 40 m v gt v d = 6 v; t vj = 25 c 1.0 v t vj = -40 c 1.2 v i gt v d = 6 v; t vj = 25 c 65 ma t vj = -40 c 80 ma t vj = 125 c 50 ma v gd t vj = t vjm ;v d = 2/3 v drm 0.2 v i gd t vj = t vjm ;v d = 2/3 v drm 5ma i l i g = 0.3 a; t g = 30 s; t vj = 25 c 150 ma di g /dt = 0.3 a/ s; t vj = -40 c 200 ma t vj = 125 c 100 ma i h t vj = 25 c; v d = 6 v; r gk = 100 ma t gd t vj = 25 c; v d = 1/2 v drm 2 s i g = 0.3 a; di g /dt = 0.3 a/ s t q t vj = 125 c, i t = 15 a, t p = 300 s, v r = 100 v typ. 150 s q r di/dt = -10 a/ s, dv/dt = 20 v/ s, v d = 2/3 v drm 75 c r thjc per thyristor (diode); dc current 2.4 k/w per module 0.6 k/w r thjk per thyristor (diode); dc current 3.0 k/w per module 0.75 k/w d s creepage distance on surface 12.6 mm d a creepage distance in air 6.3 mm a max. allowable acceleration 50 m/s 2 vhf 15 fig. 1 gate trigger range fig. 2 gate controlled delay time t gd 1 10 100 1000 0.1 1 10 i g v g ma 1: i gt , t vj = 125 c 2: i gt , t vj = 25 c 3: i gt , t vj = -40 c v 4: p gav = 0.5 w 5: p gm = 1 w 6: p gm = 10 w i gd , t vj = 125 c 4 2 1 5 6 10 100 1000 1 10 100 1000 s t gd t vj = 25 c typ. limit ma i g 3 750 .com .com .com .com 4 .com u datasheet
? 2000 ixys all rights reserved 3 - 3 fig. 3 surge overload current per chip i fsm : crest value, t: duration fig. 5 max. forward current at heatsink temperature fig. 4 i 2 t versus time (1-10 ms) per chip fig. 6 power dissipation versus direct output current and ambient temperature fig. 7 transient thermal impedance junction to heatsink per chip constants for z thjk calculation: ir thi (k/w) t i (s) 1 0.34 0.0344 2 1.16 0.12 3 1.5 0.5 vhf 15 .com .com .com 4 .com u datasheet
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